| PART |
Description |
Maker |
| 2SC4694 |
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
|
TY Semiconductor Co., Ltd
|
| 2SA1417 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SC4601 |
Surface mount type device making the following possible. Adoption of MBIT process.
|
TY Semiconductor Co., Ltd
|
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| MT5375-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
